Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance
2011; Institute of Electrical and Electronics Engineers; Volume: 32; Issue: 10 Linguagem: Inglês
10.1109/led.2011.2162311
ISSN1558-0563
AutoresZhongqiang Wang, Haiyang Xu, Xin Li, Xintong Zhang, Y. X. Liu, Yichun Liu,
Tópico(s)Thin-Film Transistor Technologies
ResumoSemitransparent flexible resistive-switching memory devices, using amorphous InGaZnO as the switching layer, are fabricated on plastic substrates at room temperature. The device shows high performance, excellent flexibility, and mechanical endurance in bending tests. No performance degradation occurs, and the stored information is not lost after bending the device to different angles and up to 10 5 times. Studies on the temperature-dependent electrical properties reveal that the conducting channels of the low-resistance state are composed of oxygen-deficient defects, and partial oxidation of these defects switches the device to the high-resistance state. The unique electronic structure and flexible mechanical properties of amorphous InGaZnO ensure stable device performance in flexible applications.
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