Portal de Periódicos da CAPES

Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT

2000; Elsevier BV; Volume: 439; Issue: 2-3 Linguagem: Inglês

10.1016/s0168-9002(99)00901-8

1872-9576

L. Andricek, D. Hauff, J. Kemmer, E. Koffeman, P. Lükewille, G. Lutz, H. G. Moser, R.H. Richter, T. Rohe, H. Soltau, A. Viehl,

Semiconductor materials and devices

Strip detectors covering radiation hardness and large-scale production ability are developed and produced for the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Switzerland). Capacitively coupled p+n detectors (p-type strips on n-type substrate) were developed with implanted bias resistors in order to simplify the detector processing addressing the requirements of large-scale production. The detectors were irradiated with 24 GeV protons up to 3×1014cm−2 in order to simulate a 10 years operation scenario at LHC. The presented static and signal measurements demonstrate the function of the device concept before and after irradiation.