High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
2007; American Institute of Physics; Volume: 91; Issue: 18 Linguagem: Inglês
10.1063/1.2803219
ISSN1520-8842
AutoresS. J. Lim, Soon-Ju Kwon, Hyungjun Kim, Jin‐Seong Park,
Tópico(s)Ga2O3 and related materials
ResumoHigh performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using NH4OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015cm−3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2O3 gate insulator; μsat=6.7cm2∕Vs, Ioff=2.03×10−12A, Ion∕off=9.46×107, and subthreshold swing=0.67V∕decade. The entire TFT fabrication processes were carried out at below 150°C, which is a favorable process for plastic based flexible display.
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