Near room-temperature synthesis of transfer-free graphene films
2012; Nature Portfolio; Volume: 3; Issue: 1 Linguagem: Inglês
10.1038/ncomms1650
ISSN2041-1723
AutoresJinsung Kwak, Jae Hwan Chu, Jae-Kyung Choi, Soon‐Dong Park, Heungseok Go, Sung Youb Kim, Kibog Park, Sung‐Dae Kim, Young-Woon Kim, Euijoon Yoon, Suneel Kodambaka, Soon‐Yong Kwon,
Tópico(s)ZnO doping and properties
ResumoLarge-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (~1,000 °C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO2/Si substrates, even plastics and glass at close to room temperature (25–160 °C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/substrate to form graphene underneath the nickel film at the nickel–substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO2 surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices. Current methods for fabricating graphene rely on its transfer from metal surfaces to substrates suitable for device applications. This study demonstrates a transfer-free approach for growing graphene on substrates such as thermally oxidized silicon and plastic that forms the material underneath a nickel film, at the nickel–substrate interface.
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