InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation
1992; Elsevier BV; Volume: 267; Issue: 1-3 Linguagem: Inglês
10.1016/0039-6028(92)91127-w
ISSN1879-2758
AutoresH. Asahi, Soon Jae Yu, J. Takizawa, S.G. Kim, Yasutoshi Okuno, T. Kaneko, Shūichi Emura, S. Gonda, Hitoshi Kubo, Chihiro Hamaguchi, Y. Hirayama,
Tópico(s)Semiconductor materials and devices
ResumoInGaAsP/InP quantum-wire structures are fabricated by focused Ga ion beam implantation onto InGaAs/InP single quantum well (QW) structures. It is found that InGaAsP layers produced by the intermixing of InGaAs/InP QW's by Ga ion implantation and subsequent thermal annealing are nearly lattice matched to the InP substrate. Fabricated quantum-wire structures exhibit photoluminescence spectra showing a large blue shift, which is induced by the carrier confinement into wire structures and the change of well composition.
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