Photo‐CVD for VLSI Isolation
1984; Institute of Physics; Volume: 131; Issue: 9 Linguagem: Inglês
10.1149/1.2116038
ISSN1945-7111
AutoresJohn Yuan‐tai Chen, Richard C. Henderson, James T. Hall, John W. Peters,
Tópico(s)Advancements in Photolithography Techniques
ResumoThis paper reviews the technique of photochemical‐assisted vapor deposition (photo‐CVD), and its applications in silicon IC processing. The photo‐CVD process deposits films (PHOTOX™) at temperatures as low as 50°C. The deposition process, the resulting film properties, and the use of PHOTOX for lateral isolation among transistors and vertical isolation between two‐level interconnects are discussed. A novel process employing PHOTOX deposition in conjunction with a photoresist liftoff can be used to achieve totally isoplanar isolation. Photo‐CVD can also be extended to produce other dielectrics such as silicon nitride and aluminum oxide.
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