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Artigo Revisado por pares
BIBTEX RIS

9.3: Active‐Matrix Organic Light Emitting Diode Using Inverse Staggered Poly‐Si TFT with a Center‐Offset Gated Structure

2009; Wiley; Volume: 40; Issue: 1 Linguagem: Inglês

10.1889/1.3256950

ISSN

2168-0159

Autores

Dong Han Kang, Jae Hwan Oh, Mi Kyung Park, Tae‐Jin Park, Beom Seok Oh, Gyeong Heon Kim, Eun‐Ho Lee, Ji Ho Hur, Jin Jang, Young Jin Chang, Jae Beom Choi, Chi Woo Kim,

Tópico(s)

Organic Electronics and Photovoltaics

Resumo

Abstract We have developed a low cost AM backplane using non‐laser polycrystalline silicon (poly‐Si) having inverse staggered TFT. The thin‐film transistors (TFTs) have a center‐offset gated structure to reduce the leakage current without scarifying the on‐currents. A center‐offset length of the TFTs has 3 μm for both switching and driving TFTs. Finally, we have made a 2.2 inch QQVGA (160 × 120) active‐matrix organic light emitting diode (AMOLED) display with conventional 2T 1C pixel circuits.

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