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Porous Silicon and Alumina as Chemically Reactive Templates for the Synthesis of Tubes and Wires of SnSe, Sn, and SnO 2

2005; Wiley; Volume: 45; Issue: 2 Linguagem: Inglês

10.1002/anie.200502665

1521-3773

Lili Zhao, Maekele Yosef, Martin Steinhart, Petra Göring, H. Hofmeister, U. Gösele, Sabine Schlecht,

Semiconductor materials and interfaces

Angewandte Chemie International EditionVolume 45, Issue 2 p. 311-315 Communication Porous Silicon and Alumina as Chemically Reactive Templates for the Synthesis of Tubes and Wires of SnSe, Sn, and SnO2† Lili Zhao, Lili Zhao Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorMaekele Yosef Dr., Maekele Yosef Dr. Institut für Chemie und Biochemie, Freie Universität Berlin, Fabeckstrasse 34–36, 14195 Berlin, Germany, Fax: (+49) 30-838-53310Search for more papers by this authorMartin Steinhart Dr., Martin Steinhart Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorPetra Göring Dr., Petra Göring Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorHerbert Hofmeister, Herbert Hofmeister Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorUlrich Gösele Prof. Dr., Ulrich Gösele Prof. Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorSabine Schlecht Prof. Dr., Sabine Schlecht Prof. Dr. [email protected] Institut für Chemie und Biochemie, Freie Universität Berlin, Fabeckstrasse 34–36, 14195 Berlin, Germany, Fax: (+49) 30-838-53310Search for more papers by this author Lili Zhao, Lili Zhao Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorMaekele Yosef Dr., Maekele Yosef Dr. Institut für Chemie und Biochemie, Freie Universität Berlin, Fabeckstrasse 34–36, 14195 Berlin, Germany, Fax: (+49) 30-838-53310Search for more papers by this authorMartin Steinhart Dr., Martin Steinhart Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorPetra Göring Dr., Petra Göring Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorHerbert Hofmeister, Herbert Hofmeister Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorUlrich Gösele Prof. Dr., Ulrich Gösele Prof. Dr. Max-Planck-Institut für Mikrostrukturphysik, Halle, GermanySearch for more papers by this authorSabine Schlecht Prof. Dr., Sabine Schlecht Prof. Dr. [email protected] Institut für Chemie und Biochemie, Freie Universität Berlin, Fabeckstrasse 34–36, 14195 Berlin, Germany, Fax: (+49) 30-838-53310Search for more papers by this author First published: 21 December 2005 https://doi.org/10.1002/anie.200502665Citations: 102 † This research was supported financially by the Deutsche Forschungsgemeinschaft (SPP 1165 "Nanowires and Nanotubes", STE 1127/2-1 and SCHL 529/2-1) and the Fonds der Chemischen Industrie. We thank T. Geppert, K. Sklarek, and S. Grimm for preparing the templates. Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Three in one: Ordered nanostructures of SnSe, SnO2, and elemental tin (see SEM image) were prepared by template-assisted synthesis in porous alumina and macroporous silicon. The use of the templates as chemical reactants allowed the preparation of all three target materials from the same single-source precursor, Sn(SePh)4. References 1 1aH. Masuda, K. Fukuda, Science 1995, 268, 1466; 1bH. Masuda, M. Satoh, Jpn. J. Appl. Phys. 1996, 35, L126; 1cH. Masuda, F. Hasegawa, S. Ono, J. Electrochem. Soc. 1997, 144, L127; 1dH. Masuda, K. Yada, A. Osaka, Jpn. J. Appl. Phys. Part 2 1998, 37, L1340; 1eP. Braunstein, H.-P. Kormann, W. Meyer-Zaika, R. Pugin, G. Schmid, Chem. Eur. J. 2000, 6, 4637; 1fK. Nielsch, J. Choi, K. Schwirn, R. B. Wehrspohn, U. Gösele, Nano Lett. 2002, 2, 677. 2 2aV. Lehmann, J. Electrochem. Soc. 1993, 140, 2836; 2bA. Birner, U. Grüning, S. Ottow, A. Schneider, F. Müller, V. Lehmann, H. Föll, U. Gösele, Phys. Status Solidi A 1998, 165, 111. 3 3aC. R. Martin, Science 1994, 266, 1961; 3bC. A. Huber, T. E. Huber, M. Sadoqi, J. A. Lubin, S. Manalis, C. B. Prater, Science 1994, 263, 800; 3cB. B. Lakshmi, P. K. Dorhout, C. R. Martin, Chem. Mater. 1997, 9, 857; 3dM. Steinhart, J. H. Wendorff, A. Greiner, R. B. Wehrspohn, K. Nielsch, J. Schilling, U. Gösele, Science 2002, 296, 1997; 3eM. Steinhart, Z. Jia, A. Schaper, R. B. Wehrspohn, U. Gösele, J. H. Wendorff, Adv. Mater. 2003, 15, 706; 3fN. I. Kovtyukhova, T. E. Mallouk, T. S. Mayer, Adv. Mater. 2003, 15, 780; 3gM. Steinhart, R. B. Wehrspohn, U. Gösele, J. H. Wendorff, Angew. Chem. 2004, 116, 1356; Angew. Chem. Int. Ed. 2004, 43, 1334; 3hL. Zhao, M. Steinhart, M. Yosef, S. K. Lee, T. Geppert, E. Pippel, R. Scholz, U. Gösele, S. Schlecht, Chem. Mater. 2005, 17, 3; 3iP. Göring, E. Pippel, H. Hofmeister, R. B. Wehrspohn, M. Steinhart, U. Gösele, Nano Lett. 2004, 4, 1121. 4S. Schlecht, M. Budde, L. Kienle, Inorg. Chem. 2002, 41, 6001. 5M. T. S. Nair, P. K. Nair, Semicond. Sci. Technol. 1991, 6, 132. 6 6aA. Bennouna, P. Y. Tessier, M. Priol, Q. Dang Tran, S. Robin, Phys. Status Solidi B 1983, 117, 51; 6bK. Bindu, P. K. Nair, Semicond. Sci. Technol. 2004, 19, 1348. 7T. Subba Rao, B. K. Samanata Ray, A. K. Chaudhuri, Thin Solid Films 1988, 165, 257. 8Y.-G. Gao, J.-S. Hu, H.-M. Zhang, H.-P. Liang, L.-J. Wan, C.-L. Bai, Adv. Mater. 2005, 17, 746. 9J.-G. Wang, M.-L. Tian, T. E. Mallouk, M. H. W. Chan, Nano Lett. 2004, 4, 1313. 10M. L. Tian, J. Wang, J. Snyder, J. Kurtz, Y. Liu, P. Schiffer, T. E. Mallouk, M. H. W. Chan, Appl. Phys. Lett. 2003, 83, 1620. 11 11aD.-F. Zhang, D.-L. Sun, J.-L. Yin, C.-H. Yan, Adv. Mater. 2003, 15, 1022; 11bM. Law, H. Kind, B. Messer, F. Kim, P. Yang, Angew. Chem. 2002, 114, 2511; Angew. Chem. Int. Ed. 2002, 41, 2405; 11cY. Liu, J. Dong, M. Liu, Adv. Mater. 2004, 16, 353; 11dZ. R. Dai, J. L. Gole, J. D. Sout, Z. L. Wang, J. Phys. Chem. B 2002, 106, 1274; 11eB. Liu, H. C. Zeng, J. Phys. Chem. B 2004, 108, 5867; 11fM. Zheng, G. Li, X. Zhang, S. Huang, Y. Lei, L. Zhang, Chem. Mater. 2001, 13, 3859. 12J. Choi, Y. Luo, R. B. Wehrspohn, R. Hillebrand, J. Schilling, U. Gösele, J. Appl. Phys. 2003, 94, 4757. 13R. Kniep, P. Lamparter, S. Steeb, Angew. Chem. 1989, 101, 975; Angew. Chem. Int. Ed. Engl. 1989, 28, 951. 14H. G. von Schnering, H. Wiedemeier, Z. Kristallogr. 1981, 156, 143. 15T. Krieg, M. Yosef, S. Schlecht, unpublished results. A 250-mg sample of Sn(SePh)4 was suspended in 50 mL of wet diethylene glycol and heated under reflux for 20 h. The reaction mixture was allowed to cool to room temperature, and the resulting off-white solid was washed filtered, washed with acetone, and air dried. An XRD pattern of the product showed the formation of SnO2 in >90 % yield with some SnSe present. 16β-Sn: JCPDS entry no. 04-673. 17Y. Ding, Z. L. Wang, J. Phys. Chem. B 2004, 108, 12280. 18SnO2: JCPDS entry no. 21-1250. Citing Literature Volume45, Issue2December 23, 2005Pages 311-315 ReferencesRelatedInformation