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Influence of transistor parameters on the noise margin of organic digital circuits

2006; Institute of Electrical and Electronics Engineers; Volume: 53; Issue: 4 Linguagem: Inglês

10.1109/ted.2006.870876

1557-9646

Stijn De Vusser, Jan Genoe, Paul Heremans,

Advanced Memory and Neural Computing

The concept of noise margin is crucial in the design and operation of digital logic circuits. Analytical expressions for the transfer curves of an inverter based on two depletion-mode p-type organic thin-film transistors (OTFTs) were calculated. Based on these expressions, the values for the noise margin of organic-based inverters were calculated. In this paper, the influence of the OTFT parameters on the noise margin is presented. Knowing that statistical variations of the transistor parameters are inherent to OTFT technology, these statistical variations are also taken into account. Finally, a circuit yield analysis is presented.