A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP
2008; Institute of Electrical and Electronics Engineers; Volume: 29; Issue: 6 Linguagem: Inglês
10.1109/led.2008.922983
ISSN1558-0563
AutoresJie Sun, Daniel Wallin, Ivan Maximov, H. Q. Xu,
Tópico(s)Semiconductor materials and devices
ResumoIn this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.
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