Portal de Periódicos da CAPES

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

2003; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 10 Linguagem: Inglês

10.1109/ted.2003.816549

1557-9646

T. Mizutani, Yutaka Ohno, M. Akita, Shigeru Kishimoto, K. Maezawa,

Silicon Carbide Semiconductor Technologies

Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying bias stress to the device. The collapse was suppressed by light illumination with energy smaller than the bandgap. The position dependence of the light illumination and the measurement of series source and drain resistances revealed that the collapse was caused by the surface states between the gate and drain electrodes, which captured electrons injected from the gate. The current collapse was eliminated by the passivation of the device surface with Si/sub 3/N/sub 4/ film.