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Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

2007; Institute of Electrical and Electronics Engineers; Volume: 54; Issue: 12 Linguagem: Inglês

10.1109/tuffc.2007.562

2373-7840

L.C. Lim, Kotam Kalidindi Rajan, Jing Jin,

Multiferroics and related materials

Relaxor ferroelectric Pb(Zn 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PZN-PT) and Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K T )ap7000, piezoelectric coefficients (d 33 )ap2800 pC/N, and electromechanical coupling factors (k 33 )ges0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K T ges5000, d 32 ap-3800 pC/N and k 32 ges0.90. [011]-poled PZN-6%PT has d 32 ap-3000 pC/N and comparable k 32 and K T values. In comparison with melt-grown PMN-PT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (Tup).