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A computer model for the simulation of thin-film silicon-hydrogen alloy solar cells

1989; Institute of Electrical and Electronics Engineers; Volume: 36; Issue: 5 Linguagem: Inglês

10.1109/16.299672

1557-9646

J.L. Gray,

Semiconductor materials and interfaces

A 1-D computer simulation code, Thin-Film Semiconductor Simulation Program (TFSSP), for the modeling of TF Si:H solar cells is discussed. The code incorporates a variety of physical models, such as a position-dependent bandgap, electron affinity, dielectric constant, density of states, mobility, exponential band tails, and dangling-bond defect states. This flexibility allows different model assumptions to be analyzed and compared. TFSSP and the physical models used are described. An example simulation of a typical TF Si:H solar cell is presented. >