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Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges

2011; Volume: 23; Issue: 15 Linguagem: Inglês

10.1002/adma.201004673

1521-4095

Yanwu Xie, Christopher Bell, Yasuyuki Hikita, Harold Y. Hwang,

Semiconductor materials and devices

Advanced MaterialsVolume 23, Issue 15 p. 1744-1747 Communication Tuning the Electron Gas at an Oxide Heterointerface via Free Surface Charges Yanwu Xie, Yanwu Xie Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, ChinaSearch for more papers by this authorChristopher Bell, Christopher Bell Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, ChinaSearch for more papers by this authorYasuyuki Hikita, Yasuyuki Hikita Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, JapanSearch for more papers by this authorHarold Y. Hwang, Corresponding Author Harold Y. Hwang [email protected] Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan Japan Science and Technology Agency, Kawaguchi, Saitama 332–0012, Japan Department of Applied Physics, Stanford University, CA 94305–4090, USA Stanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USAStanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.Search for more papers by this author Yanwu Xie, Yanwu Xie Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, ChinaSearch for more papers by this authorChristopher Bell, Christopher Bell Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan State Key Laboratory of Metastable Materials Science and Technology, Yanshan, University, Qinhuangdao, 066004, ChinaSearch for more papers by this authorYasuyuki Hikita, Yasuyuki Hikita Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, JapanSearch for more papers by this authorHarold Y. Hwang, Corresponding Author Harold Y. Hwang [email protected] Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277–8561, Japan Japan Science and Technology Agency, Kawaguchi, Saitama 332–0012, Japan Department of Applied Physics, Stanford University, CA 94305–4090, USA Stanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USAStanford Institute for Materials and Energy Science, SLAC National Accelerator, Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA.Search for more papers by this author First published: 14 March 2011 https://doi.org/10.1002/adma.201004673Citations: 58Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Stable and polarity-switchable free charges are written on the surface of a LaAlO3/SrTiO3 heterostructure using conducting atomic force microscopy. These charges reversibly tune the conductance at the LaAlO3/SrTiO3 interface in a non-volatile way. The modulation in carrier density is large, ≈3 × 1013 cm−2, comparable to the maximum modulation achieved by the normal field effect. Citing Literature Volume23, Issue15April 19, 2011Pages 1744-1747 RelatedInformation