Influence of Oxygen on the Formation of Aluminum Silicon Carbide
1992; Wiley; Volume: 75; Issue: 1 Linguagem: Inglês
10.1111/j.1151-2916.1992.tb05472.x
ISSN1551-2916
AutoresR. J. Oscroft, Derek P. Thompson,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoX‐ray diffraction studies have been used to follow the formation of Al 4 SiC 4 from Al 4 C 3 and SiC and the role played by impurity oxygen. The phase Al 2 OC forms in the early stages of reaction and reacts with SiC at ≈ 1700°C to produce Al 4 SiC 4 plus a small amount of an aluminosilicate liquid. This liquid dissociates at higher temperatures, the resulting evolution of gases hindering complete densification. Higher densities are obtained on hot‐pressing.
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