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Low temperature wafer direct bonding

1994; Institute of Electrical and Electronics Engineers; Volume: 3; Issue: 1 Linguagem: Inglês

10.1109/84.285720

1941-0158

Qin‐Yi Tong, G. Cha, R. Gafiteanu, U. Gösele,

Additive Manufacturing and 3D Printing Technologies

A pronounced increase of interface energy of room temperature bonded hydrophilic Si/Si, Si/SiO/sub 2/, and SiO/sub 2//SiO/sub 2/ wafers after storage in air at room temperature, 150/spl deg/C for 10-400 h has been observed. The increased number of OH groups due to a reaction between water and the strained oxide and/or silicon at the interface at temperatures below 110/spl deg/C and the formation of stronger siloxane bonds above 110/spl deg/C appear to be the main mechanisms responsible for the increase in the interface energy. After prolonged storage, interface bubbles are detectable by an infrared camera at the Si/Si bonding seam. Desorbed hydrocarbons as well as hydrogen generated by a reaction of water with silicon appear to be the major contents in the bubbles. Design guidelines for low temperature wafer direct bonding technology are proposed. >