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Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

2008; Institute of Electrical and Electronics Engineers; Volume: 29; Issue: 12 Linguagem: Inglês

10.1109/led.2008.2007599

1558-0563

Anne S. Verhulst, William G. Vandenberghe, Karen Maex, Stefan De Gendt, Marc Heyns, G. Groeseneken,

Nanowire Synthesis and Applications

As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material germanium, which results in a current boost up to the same level as the current of MOSFETs. However, no solution has been reported to boost the on-current of the all-silicon p-TFET, a necessity for making an inverter and competing with the MOSFET. We have investigated the heterostructure TFET with respect to complementarity based on our semi-analytical model, and we propose the In x Ga 1 - x As-source silicon-TFET as p-TFET. This design is particularly applicable to nanowire-based transistor architectures. We discuss the complementarity of the I - V curves, and we analyze the threshold voltage behavior of the complementary TFETs.