Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect
2013; American Physical Society; Volume: 110; Issue: 20 Linguagem: Inglês
10.1103/physrevlett.110.206601
ISSN1092-0145
AutoresHiroyasu Nakayama, Matthias Althammer, Y.-T. Chen, Ken‐ichi Uchida, Y. Kajiwara, Daisuke Kikuchi, T. Ohtani, Stephan Geprägs, Matthias Opel, S. Takahashi, Rudolf Groß, G. Bauer, Sebastian T. B. Goennenwein, Eiji Saitoh,
Tópico(s)Magneto-Optical Properties and Applications
ResumoWe report anisotropic magnetoresistance in $\mathrm{Pt}|{\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ bilayers. In spite of ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it ``spin Hall magnetoresistance.''
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