Valence band offsets at Cu(In,Ga)Se 2 /Zn(O,S) interfaces
2013; Wiley; Volume: 211; Issue: 9 Linguagem: Inglês
10.1002/pssa.201330353
ISSN1862-6319
AutoresTobias Adler, Miriam Botros, Wolfram Witte, Dimitrios Hariskos, R. Menner, Michael Powalla, Andreas Klein,
Tópico(s)Copper-based nanomaterials and applications
Resumophysica status solidi (a)Volume 211, Issue 9 p. 1972-1980 Original Paper Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces Tobias Adler, Tobias Adler Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, GermanySearch for more papers by this authorMiriam Botros, Miriam Botros Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, Germany Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorWolfram Witte, Wolfram Witte Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorDimitrios Hariskos, Dimitrios Hariskos Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorRichard Menner, Richard Menner Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorMichael Powalla, Michael Powalla Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorAndreas Klein, Corresponding Author Andreas Klein Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, GermanyCorresponding author: e-mail aklein@surface.tu-darmstadt.de, Phone: +49-6151-166354, Fax: +49-6151-166308Search for more papers by this author Tobias Adler, Tobias Adler Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, GermanySearch for more papers by this authorMiriam Botros, Miriam Botros Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, Germany Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorWolfram Witte, Wolfram Witte Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorDimitrios Hariskos, Dimitrios Hariskos Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorRichard Menner, Richard Menner Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorMichael Powalla, Michael Powalla Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Industriestraße 6, 70565 Stuttgart, GermanySearch for more papers by this authorAndreas Klein, Corresponding Author Andreas Klein Surface Science Division, Institute of Materials Science, Technische Universität Darmstadt, Petersenstraße 32, 64287 Darmstadt, GermanyCorresponding author: e-mail aklein@surface.tu-darmstadt.de, Phone: +49-6151-166354, Fax: +49-6151-166308Search for more papers by this author First published: 19 December 2013 https://doi.org/10.1002/pssa.201330353Citations: 14 Dedicated to Wolfram Jaegermann on the occasion of his 60th birthday Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which are important for thin-film solar cells, are considered. Valence band offsets derived from X-ray photoelectron spectroscopy for Cu(In,Ga)Se2 absorber layers with CdS and Zn(O,S) compounds are compared to theoretical predictions. It is shown that the valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces approximately follow the theoretical prediction and vary significantly from sample to sample. The integral sulfide content of chemical bath deposited Zn(O,S) is reproducibly found to be 50–70%, fortuitously resulting in a conduction band offset suitable for solar cell applications with Cu(In,Ga)Se2 absorber materials. The observed variation in offset can neither be explained by variation of the Cu content in the Cu(In,Ga)Se2 near the interface nor by local variation of the chemical composition. Fermi level pinning induced by high defect concentrations is a possible origin of the variation of band offset. Citing Literature Volume211, Issue9September 2014Pages 1972-1980 RelatedInformation
Referência(s)