Charge‐Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regioregular Poly(3‐hexylthiophene)
2009; Volume: 21; Issue: 16 Linguagem: Inglês
10.1002/adma.200802722
ISSN1521-4095
AutoresLeslie H. Jimison, Michael F. Toney, Iain McCulloch, Martin Heeney, Alberto Salleo,
Tópico(s)Thin-Film Transistor Technologies
ResumoP3HT films that are highly anisotropic in-plane are produced using a directional crystallization technique, and the charge-transport properties of grain bourdaries between different orientations of crystallites are studied. Boundaries along the fiber provide a small barrier to charge transport when compared to fiber-to-fiber grain boundaries. The films allow a correlation to be drawn between the grain-boundary type and charge-transport behavior in P3HT.
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