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Electronic transport properties of Ti-impurity band in Si

2009; Institute of Physics; Volume: 42; Issue: 8 Linguagem: Inglês

10.1088/0022-3727/42/8/085110

1361-6463

J. Olea, G. González-Dı́az, David Pastor, I. Mártil,

Integrated Circuits and Semiconductor Failure Analysis

In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory.