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Temperature dependence of Hg/sub 0.68/Cd/sub 0.32/Te infrared photoconductor performance

1995; Institute of Electrical and Electronics Engineers; Volume: 42; Issue: 8 Linguagem: Inglês

10.1109/16.398658

1557-9646

F. Siliquini, C.A. Musca, Brett Nener, L. Faraone,

Semiconductor Quantum Structures and Devices

An experimental and theoretical study has been carried out of the temperature dependent noise and responsivity performance of n-type x=0.32 Hg/sub 1-x/Cd/sub x/Te (corresponding to a 4.6 /spl mu/m cutoff wavelength at 80 K) photoconductors. The fundamental noise sources that ultimately limit the specific detectivity, D*/sub /spl lambda//, at the three main temperatures of interest (i.e., 80 K, 200 K, and 300 K) are identified and correlated with the experimental material parameters of the device. A device model is presented for the responsivity and noise voltage which takes into account surface effects such as surface recombination and accumulation layer shunting. For a given set of device and material parameters this model is well able to account for the observed experimental values of responsivity and noise voltage over the full temperature range from 80-300 K. Using a theoretical model, it is shown that under ideal conditions it is possible to achieve background limited performance at temperatures up to 210 K. Experimental results are presented for responsivity, noise voltage, semiconductor surface charge density and D*/sub /spl lambda// for a frontside-illuminated Hg/sub 1-x/Cd/sub x/ Te photoconductive detector, as a function of temperature in the range 80-300 K. The devices were fabricated on Liquid Phase Epitaxially (LPE) grown n-type Hg/sub 0.68/Cd/sub 0.32/Te, and were passivated with anodic oxide/ZnS on the front side. The detector area is 250/spl times/250 /spl mu/m/sup 2/ and has a cut-off wavelength of 4.6 /spl mu/m at 80 K. For a signal wavelength of 4 /spl mu/m and a 40/spl deg/ field of view, a background limited D*/sub /spl lambda// of 3.8/spl times/10/sup 11/ cm Hz/sup 1/2 / W/sup -1/ was obtained for temperatures up to 180 K, while D*/sub /spl lambda// of 1.4/spl times/10/sup 11/ and 2/spl times/10/sup 9/ cm Hz/sup 1/2 / W/sup -1/ were measured at 200 K and 300 K, respectively. These figures are comparable to the highest reported D*/sub /spl lambda// for n-type x=0.32 Hg/sub 1-x/Cd/sub x/Te mid-wavelength infrared photoconductive detectors operating at these temperatures. >