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Nanometer-scale two-terminal semiconductor memory operating at room temperature

2005; American Institute of Physics; Volume: 86; Issue: 4 Linguagem: Inglês

10.1063/1.1852711

1520-8842

Aimin Song, M. Missous, P. Omling, Ivan Maximov, W. Seifert, Lars Samuelson,

Quantum and electron transport phenomena

Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density.