Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors
2009; Institute of Electrical and Electronics Engineers; Volume: 27; Issue: 1 Linguagem: Inglês
10.1109/jlt.2008.928542
ISSN1558-2213
AutoresJiangyong Zhang, Lie Cai, Baoping Zhang, Shuiqing Li, Feng Lin, Jingzhi Shang, Duxiang Wang, Ke-Chuang Lin, Jinzhong Yu, Qiming Wang,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoOptically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta 2 O 5 /SiO 2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 nm under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm 2 . The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-based VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.
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