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Local Band Gap Measurements by VEELS of Thin Film Solar Cells

2014; Oxford University Press; Volume: 20; Issue: 4 Linguagem: Inglês

10.1017/s1431927614000543

1435-8115

Debora Keller, Stephan Buecheler, Patrick Reinhard, Fabian Pianezzi, Darius Pohl, Alexander R. Surrey, Bernd Rellinghaus, Rolf Erni, Ayodhya N. Tiwari,

Semiconductor materials and interfaces

Abstract This work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se 2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se 2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se 2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se 2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundaries.