Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs
2009; Institute of Electrical and Electronics Engineers; Volume: 56; Issue: 6 Linguagem: Inglês
10.1109/tns.2009.2034156
ISSN1558-1578
AutoresAditya Kalavagunta, Marco Silvestri, Matthew J. Beck, S. K. Dixit, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, L. Shen, Umesh K. Mishra,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoThe relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.
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