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Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

2009; Elsevier BV; Volume: 311; Issue: 14 Linguagem: Inglês

10.1016/j.jcrysgro.2009.04.039

1873-5002

Dai Tsukada, Yuta Matsumoto, Ryo Sasaki, Michitoshi Takeishi, Takanobu Saito, Noritaka Usami, Takashi Suemasu,

Silicon and Solar Cell Technologies

We have prepared (1 1 1)-oriented Si layers on SiO2 (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO2), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si. The crystal orientation of the Si layers was confirmed by θ−2θ, 2θ XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi2 films formed on the (1 1 1)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi2 were also evaluated.