Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition
2010; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 9 Linguagem: Inglês
10.1109/led.2010.2052090
ISSN1558-0563
AutoresJyun-Yi Wu, Yen‐Ting Chen, Ming-Ho Lin, Tai‐Bor Wu,
Tópico(s)Advanced Memory and Neural Computing
ResumoCharge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a metal-Al 2 O 3 -HfON-SiO 2 -Si (MAH N OS) structure are investigated. We found that an ultrathin HfON (~2.5 nm) embedded in MAH N OS has large memory window (~7.5 V at V g = ±15 V), sufficient erase speed (Δ V FB = 4 V at -16 V/1 ms), and satisfactory data retention. From the relation of erase transient current density (J) versus tunnel oxide e-field (E TUN ), we also found that the erase mechanism of MAH N OS depends on electron detrapping from HfON to Si substrates. However, MAH N OS embedding with a thicker HfON shows a poor data retention due to the increase of crystallization of the trapping layer.
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