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An electron beam lithography system for submicron VHSIC device fabrication

1985; AIP Publishing; Volume: 3; Issue: 1 Linguagem: Inglês

10.1116/1.583189

2327-9877

H. J. King, P. E. Merritt, O.W. Otto, F. S. Ozdemir, J. Pasiecznik, Allen Carroll, D. L. Cavan, W. Eckes, Li Lin, Lee H. Veneklasen, J. C. Wiesner,

Semiconductor Lasers and Optical Devices

A direct write electron beam lithography system has been constructed which is capable of writing 0.5 μm VHSIC patterns at a rate of 4 to 25 four−inch wafer levels per hour. The several key subsystems which permit this increase in performance over existing systems are (1) A variable shaped beam which exposes rectangular or triangular shapes from 0.5 to 2.0 μm in size at a current density up to 200 A/cm2; (2) an all digital, 100 MHz pattern generator with optical couplers for high speed, low noise data processing; (3) a unique deflection system with specially designed 18 bit digital to analog converters and ultralinear amplifiers; (4) a mechnaical state capable of 10 cm/s speed and 0.8 g acceleration, under microprocessor control, providing write-while-moving capability and synchronization with the pattern generator; and (5) a wafer handler system for cassette-to-cassette input/output; and (6) a complimentary software package which constructs files with the necessary data compaction for rapid transmission and proximity correction for proper exposure.