Portal de Periódicos da CAPES

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

2009; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 1 Linguagem: Inglês

10.1109/led.2009.2035145

1558-0563

N. Sarazin, E. Morvan, M.A. Poisson, M. Oualli, Christophe Gaquière, Olivier Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage,

Silicon Carbide Semiconductor Technologies

High-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate. The results presented in this letter confirm the high performance that is reachable by AlInN-based technology with an output power of 10.3 W/mm and a power-added efficiency of 51% at 10 GHz with a gate length of 0.25 ¿m. A good extrinsic transconductance value that is greater than 450 mS/mm and exceeding AlGaN/GaN HEMT results was also measured on these transistors. To our knowledge, these results are the best power results published on AlInN/GaN HEMTs. These good results were attributed to optimized heterostructure properties associated with low-resistance ohmic contacts and an effective passivation layer minimizing drain current slump in high-frequency operations.