Atomic Layer Deposition of High-<tex>$kappa$</tex>Dielectric for Germanium MOS Applications—Substrate Surface Preparation
2004; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 5 Linguagem: Inglês
10.1109/led.2004.827285
ISSN1558-0563
AutoresChi On Chui, H. Kim, Paul C. McIntyre, Krishna C. Saraswat,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoIn this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS devices. Different Ge surface cleaning methods prior to high-/spl kappa/ ALD have been evaluated together with the effects on inserting a Ge oxynitride (GeO/sub x/N/sub y/) interlayer between the high-/spl kappa/ layer and the Ge substrate. By incorporating a thin GeO/sub x/N/sub y/ interlayer, we have demonstrated excellent MOS capacitors with very small capacitance-voltage hysteresis and low gate leakage. Physical characterization has also been done to further investigate the quality of the oxynitride interlayer.
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