Investigation of electrical properties of structures
1995; Elsevier BV; Volume: 255; Issue: 1-2 Linguagem: Inglês
10.1016/0040-6090(94)05668-4
ISSN1879-2731
AutoresM. Ádám, Zs. J. Horváth, I. Bársony, L. Szölgyémy, É. Vázsonyi, Vo Van Tuyen,
Tópico(s)Semiconductor materials and devices
ResumoResults of capacitance-voltage (C–V) and capacitance-time measurements performed on Auporous silicon (PS)Si diodes having different porosity and morphology of the obtained porous layer are presented. The C–V characteristics of the studied Au/PS/Si diodes are similar to those of poor metal-insulator-semiconductor capacitors. The porosity dependence of the “insulator” capacitance is interpreted by a model assuming two parallel phases. The results obtained indicate that the C–V measurements may be useful for checking (i) the long-term stability of the metal/PS/Si junctions, (ii) the lateral homogeneity of the wafers, and (iii) the thickness and porosity of the porous layer.
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