Tunable n‐Type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays
2007; Volume: 20; Issue: 1 Linguagem: Inglês
10.1002/adma.200701377
ISSN1521-4095
AutoresG. D. Yuan, Wenjun Zhang, Jiansheng Jie, Xia Fan, Jianxin Tang, I. Shafiq, Zhao‐Yang Ye, Chun‐Sing Lee, S.‐T. Lee,
Tópico(s)Gas Sensing Nanomaterials and Sensors
ResumoWell-aligned ZnO nanowires (NWs) with tunable n-type conductivity are synthesized by introducing Ga2O3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the resistivity of ZnO NWs can be controlled, with high reproducibility, by the Ga impurities.
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