Static dielectric constant of isolated silicon nanocrystals embedded in a SiO2 thin film
2006; American Institute of Physics; Volume: 88; Issue: 6 Linguagem: Inglês
10.1063/1.2172009
ISSN1520-8842
AutoresC. Y. Ng, T. P. Chen, Lu Ding, Y. Liu, M.S. Tse, S. Fung, Zhenggao Dong,
Tópico(s)Semiconductor materials and interfaces
ResumoThe static dielectric constant of isolated silicon nanocrystals (nc-Si) embedded in a SiO2 thin film synthesized by Si+ implantation has been determined from capacitance measurement based on the Maxwell–Garnett effective medium approximation and the stopping and range of ions in matter simulation. For the nc-Si with a mean size of ∼4.5nm, the dielectric constant so determined is 9.8, being consistent with a theoretical prediction. This value is significantly lower than the static dielectric constant (11.9) of bulk crystalline Si, indicating the significance of nc-Si size effect. The information of nc-Si dielectric constant is not only important to the fundamental physics but also useful to the design and modeling of nc-Si-based memory devices.
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