Contact and via structures with copper interconnects fabricated using dual Damascene technology
1994; Institute of Electrical and Electronics Engineers; Volume: 15; Issue: 8 Linguagem: Inglês
10.1109/55.296225
ISSN1558-0563
AutoresS. Lakshminarayanan, Joseph M. Steigerwald, D.T. Price, Marc R. Bourgeois, T. Paul Chow, R.J. Gutmann, S. P. Murarka,
Tópico(s)Semiconductor materials and devices
ResumoA novel submicron process sequence was developed for the fabrication of CoSi/sub 2//n/sup +/-Si, CoSi/sub 2//p/sup +/-Si ohmic contacts and multilevel interconnects with copper as the interconnect/via metal and titanium as the diffusion barrier. SiO/sub 2/ deposited by plasma enhanced chemical vapor deposition (PECVD) using TEOS/O/sub 2/ was planarized by the novel technique of chemical-mechanical polishing (CMP) and served as the dielectric. The recessed copper interconnects in the oxide were formed by chemical-mechanical polishing. (dual Damascene process). Electrical characterization of the ohmic contacts yielded contact resistivity values of 10/sup -6//spl Omega/-cm/sup 2/ or less. A specific contact resistivity value of 1.5/spl times/10/sup -8//spl Omega/-cm/sup 2/ was measured for metal/metal contacts. >
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