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Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure

2003; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 12 Linguagem: Inglês

10.1109/ted.2003.818154

1557-9646

Gi Bum Kim, Yeo-Geon Yoon, Minsun Kim, Hunjoon Jung, Seok-Woon Lee, Seung‐Ki Joo,

Semiconductor materials and interfaces

We have observed that B/sub 2/H/sub 6/-doped amorphous silicon (a-Si) showed a faster growth rate of metal-induced lateral crystallization (MILC) than that of undoped a-Si. From the analysis of the microstructure, it was thought that boron atoms could help modify the growth behavior from that of a branched crystal network to unidirectional crystal growth with few branches and that growth rate could to be enhanced. By using this good crystalline structure at the boundary region between the source/drain and channel, we have successfully fabricated p-type poly-Si thin-film transistors with good electrical properties with a MILC process.