Correlation of diffusivities of various elements in silicon

1988; Wiley; Volume: 105; Issue: 2 Linguagem: Inglês

10.1002/pssa.2211050245

ISSN

1521-396X

Autores

V. Hadjicontis, C. A. Londos, K. Eftaxias,

Tópico(s)

Advanced Materials Characterization Techniques

Resumo

physica status solidi (a)Volume 105, Issue 2 p. K87-K92 Short Note Correlation of diffusivities of various elements in silicon V. Hadjicontis, V. Hadjicontis Physics Department, University of Athens Search for more papers by this authorC. A. Londos, C. A. Londos Physics Department, University of Athens Search for more papers by this authorK. Eftaxias, K. Eftaxias Physics Department, University of Athens Search for more papers by this author V. Hadjicontis, V. Hadjicontis Physics Department, University of Athens Search for more papers by this authorC. A. Londos, C. A. Londos Physics Department, University of Athens Search for more papers by this authorK. Eftaxias, K. Eftaxias Physics Department, University of Athens Search for more papers by this author First published: 16 February 1988 https://doi.org/10.1002/pssa.2211050245Citations: 6 Knossou Str. 36, Ano Glyfada, G-16561 Athens, Greece. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 P. Varotsos and K. Alexopoulos, in: Thermodynamics of Point Defects and Their Relation with Bulk Properties, Ed. S. Amelinckx, R. Gevers and J. Nihoul, North Holland Publ. Co., 1986 (Chap. 11). 2 J. L. Tallon, J. Phys. Chem. Solids 41, 837 (1982). 3 E. R. Weber, Appl. Phys. A 30, 1 (1983). 4 P. Dorner, W. Gust, A. Lodding, H. Odelius, B. Predel and U. Roll, Internat. Conf. DIMETA 82: Diffusion in Metals and Alloys, Tihany (Hungary) 1982, Trans. Tech. Publications, 1983 (p. 488). 5 R. R. Reeber, phys. stat. sol. (a) 32, 321 (1975). 6 O. Matsuo and O. Kagaya, phys. stat. sol. (b) 139, 417 (1987). 7 W. R. Wilcox and T. J. La Chapelle, J. appl. Phys. 35, 240 (1964). 8 I. V. Antonova, K. B. Kadyrakunov, E. V. Nidaev and L. S. Smirnov, phys. stat. sol. (a) 76, K213 (1983). 9 R. N. Hall and J. H. Racette, J. appl. Phys. 35, 379 (1964). 10 M. K. Bakhadyrkhanov, S. Zainabidinov and A. Khamidov, Soviet Phys. - Semicond. 14, 243 (1980). 11 D. Gilles, W. Bergholz and W. Schroter, J. appl. Phys. 59, 3590 (1986). 12 E. M. Pell, Phys. Rev. 119, 1222 (1960). 13 J. D. Struthers, J. appl. Phys. 27, 1560 (1956). 14 J.-T. Lue and O. Meyer, J. appl. Phys. 54, 1148 (1983). 15 S. A. Azimov, B. V. Umarov and M. S. Yunusov, Soviet Phys. - Semicond. 10, 842 (1976). 16 V. P. Boldyrev, I. I. Pokrovskii, S. G. Romanovskaya, A. V. Tkach and I. E. Shimayovich, Soviet Phys. - Semicond. 11, 709 (1977). 17 H. Tomokaye, M. Hagiwara and K. Hashimoto, Mem. Fac. Engng. Kyushu Univ. 42, 89 (1982). 18 R. O. Carlson, R. N. Hall and E. M. Pell, J. Phys. Chem. Solids 8, 81 (1959). 19 C.-S. Kim and M. Sakata, Japan. J. appl. Phys. 18, 247 (1979). 20 H. R. Hydyanath, J. S. Lorenzo and F. A. Kroger, J. appl. Phys. 49, 5928 (1978). 21 J. C. Mikkelsen, Appl. Phys. Letters 40, 336 (1982). 22 M. Stavola, J. R. Patel, L. C. Mimerling and P. E. Freeland, Appl. Phys. Letters 42, 73 (1983). 23 G. D. Watkins, J. W. Corbettand and R. S. McDonald, J. appl. Phys. 53, 7097 (1982). 24 Y. Itoh and T. Nozaki, Japan. J. appl. Phys. 24, 279 (1985). 25 Y.-H. Paek and C.-S. Kim, Trans. Korean Inst. Engng. 31, 198 (1982). 26 E. Janzen, H.-G. Grimmeiss, A. Lodding and Ch. Deline, J. appl. Phys. 53, 7367 (1982). 27 S. Haridoss, F. Beniere, M. Gaunean and A. Rupert, J. appl. Phys. 51, 5833 (1980). 28 C. S. Fuller and Z. A. Ditzenberger, J. appl. Phys. 27, 544 (1956). 29 R. C. Newman, in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, Ed. J. C. Mikkelsen, S. J. Pearton, Z. W. Corbett and S. J. Pennycook, Material Research Society, Vol. 59, 1986 (p. 403). 30 See /29/ (p. 523). 31 R. N. Ghoshtagore, Phys. Rev. B 3, 2507 (1971). 32 J. S. Makris and B. J. Masters, J. Electrochem. Soc. 120, 1252 (1973). 33 M. Okamura, Japan. J. appl. Phys. 8, 1440 (1969). 34 B. J. Masters and J. M. Fairfield, J. appl. Phys. 40, 2390 (1969). 35 F. J. Demond, S. Kalbitzer, H. Manusperger and H. Damjant Schitch, Phys. Letters A 93, 503 (1983). 36 L. Kalinowski and S. Reguin, Appl. Phys. Letters 35, 211 (1979); Appl. Phys. Letters 36, 171 (1980). 37 H. J. Mayer, H. Mehrer and K. Maier, Inst. Phys. Conf. Ser. 31, 186 (1977). 38 G. Hettich, H. Mehrer and K. Maier, Inst. Phys. Conf. Ser. 46, 500 (1979). Citing Literature Volume105, Issue216 February 1988Pages K87-K92 ReferencesRelatedInformation

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