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Artigo Revisado por pares
BIBTEX RIS

21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer

2009; Wiley; Volume: 40; Issue: 1 Linguagem: Inglês

10.1889/1.3256764

ISSN

2168-0159

Autores

Hiroki Ohara, Toshinari Sasaki, Kousei Noda, Shunichi Ito, Miyuki Sasaki, Yayoi Toyosumi, Yuta Endo, Shuhei Yoshitomi, Junichiro Sakata, Tadashi Serikawa, Shunpei Yamazaki,

Tópico(s)

Transition Metal Oxide Nanomaterials

Resumo

Abstract We have developed a 4.0 inch QVGA AMOLED display using amorphous In‐Ga‐Zn‐Oxide TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to have “normally off” characteristics by using SiO x with a low hydrogen content. Besides, small subthreshold swing and high saturation mobility are obtained.

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