A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology
2009; IEEE Microwave Theory and Techniques Society; Volume: 19; Issue: 9 Linguagem: Inglês
10.1109/lmwc.2009.2027095
ISSN1558-1764
AutoresYong‐Sub Lee, Mun‐Woo Lee, Sang‐Ho Kam, Yoon‐Ha Jeong,
Tópico(s)GaN-based semiconductor devices and materials
ResumoA high efficiency, GaN based power amplifier (PA) employing the inverse class-E topology is reported. The parasitic inductance and large output capacitance of the packaged active device are used as the series inductance and compensated by a shunt inductor, respectively. The composite right/left-handed transmission line is used as a harmonic control network. For the experimental validation, an inverse class-E PA is designed using a GaN HEMT and tested with a continuous wave at 1 GHz. From the measured results, the drain efficiency and power-added efficiency (PAE) of 79.7% and 78.8% with a gain of 19.03 dB is achieved at an output power of 41.03 dBm. Also, the inverse class-E PA can deliver the output power and PAE of over 40.8 dBm and 65% through the bandwidth of 100 MHz.
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