Portal de Periódicos da CAPES

High power AlGaN ultraviolet light emitters

2014; IOP Publishing; Volume: 29; Issue: 8 Linguagem: Inglês

10.1088/0268-1242/29/8/084007

1361-6641

Max Shatalov, Wenhong Sun, Rakesh Jain, A. V. Lunev, X. Hu, Alex Dobrinsky, Yuri Bilenko, Jinwei Yang, G. A. Garrett, L. E. Rodak, Michael Wraback, M. S. Shur, R. Gaška,

Ga2O3 and related materials

We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.