Portal de Periódicos da CAPES

Gate current dependence of low-frequency noise in GaAs MESFET'S

1981; Institute of Electrical and Electronics Engineers; Volume: 2; Issue: 8 Linguagem: Inglês

10.1109/edl.1981.25405

1558-0563

Maitreya Das, Prasanta Ghosh,

Advancements in Semiconductor Devices and Circuit Design

Characteristics of low-frequency noise generators in ion-implanted GaAs MESFET's on semi-insulating substrates were determined using measurements at 300°K and 105°K in the frequency range of 10Hz to 50KHz. The noise magnitude shows strong dependence on gate leakage current and its spectral response is a combination of both 1/f and 1/f 2 types. The high-field gate-leakage current dependence of excess LF noise suggests the tunneling of electrons into deep level defects and their subsequent thermal emission to the conduction band.