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Peripheral emitter—Base junction capacitance in bipolar transistors

1979; Institute of Electrical and Electronics Engineers; Volume: 26; Issue: 5 Linguagem: Inglês

10.1109/t-ed.1979.19499

1557-9646

D.J. Roulston, R.C. Kumar,

Semiconductor Lasers and Optical Devices

The emitter-base peripheral (sidewall) capacitance of double-diffused silicon bipolar transistors is computed at zero bias. Results are presented in such a way as to provide useful design data.