The effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode
2007; American Institute of Physics; Volume: 90; Issue: 3 Linguagem: Inglês
10.1063/1.2431717
ISSN1520-8842
AutoresEun-Hyun Park, David Nicol Hun Kang, Ian T. Ferguson, Soo-Kun Jeon Joong-Seo Park, Tae-Kyung Yoo,
Tópico(s)Semiconductor materials and interfaces
ResumoThe effect of silicon doping in the selected barrier on the electroluminescence of InGaN∕GaN multiquantum well light emitting diode (LED) was studied using dual wavelength LEDs. The result verified that the hole carrier transport is easily blocked by the silicon doped barrier, and the dominant electron and hole recombination occurs at the wells between p-GaN and the silicon doped barrier. The electroluminescence spectrum and the wavelength blueshift of the silicon doped LEDs were compared with undoped LEDs. The numerical simulation was done to clearly explain the hole blocking effect by the silicon doped barrier.
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