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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

2006; Institute of Electrical and Electronics Engineers; Volume: 53; Issue: 6 Linguagem: Inglês

10.1109/tns.2006.885382

1558-1578

Akil K. Sutton, A. P. Gnana Prakash, Bongim Jun, Enhai Zhao, M. Bellini, Jonathan A. Pellish, Ryan M. Diestelhorst, Martin A. Carts, Anthony Phan, Ray Ladbury, John D. Cressler, Paul W. Marshall, Cheryl J. Marshall, Robert A. Reed, Ronald D. Schrimpf, Daniel M. Fleetwood,

Radio Frequency Integrated Circuit Design

We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a commercial 200 GHz SiGe HBT technology. Proton, gamma, and X-ray irradiations at varying dose rates are found to produce drastically different degradation signatures at the various oxide interfaces. Extraction and analysis of the radiation-induced excess base current, as well as low-frequency noise, are used to probe the underlying physical mechanisms. Two-dimensional calibrated device simulations are employed to correlate the observed results to the spatial distributions of carrier recombination in forward- and inverse-mode operation for both pre- and post-irradiation levels. Possible explanations of our observations are offered and the implications for hardness assurance testing are discussed.