N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide
2004; Institute of Electrical and Electronics Engineers; Volume: 25; Issue: 8 Linguagem: Inglês
10.1109/led.2004.831582
ISSN1558-0563
AutoresS. Zhu, Kevin J. Chen, M.-F. Li, S.J. Lee, Jagar Singh, Chunxiang Zhu, Anyan Du, Ching‐Hsuan Tung, Albert Chin, Dim‐Lee Kwong,
Tópico(s)Silicon and Solar Cell Technologies
ResumoYtterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, which is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO/sub 2/ gate dielectric, and HaN/TaN metal gate. The YbSi/sub 2 - x/ silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I/sub on//l/sub off/ ratio of /spl sim/10/sup 7/ and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi/sub 2 - x//Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.
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