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Demonstration of damage-free mask repair using electron beam-induced processes

2004; SPIE; Volume: 5446; Linguagem: Inglês

10.1117/12.557788

1996-756X

Ted Liang, Alan R. Stivers, M. J. Penn, Dan Bald, Chetan Sethi, Volker Boegli, Michael Budach, Klaus Edinger, Petra Spies,

Integrated Circuits and Semiconductor Failure Analysis

In this paper, we present the test results obtained from the first commercial electron beam mask repair tool. Repaired defect sites on chrome-on-glass masks are characterized with 193nm AIMS to quantify the edge placement precision as well as optical transmission loss. The electron beam mask repair tool is essentially based on a scanning electron microscope (SEM), therefore, it can be used for in-situ CD and defect metrology. E-beam for EUV mask defect repair is also discussed. These early results are very encouraging and demonstrate the basic advantages of electron beam mask repair as well as highlight the key challenge of charge control.