Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors
2003; Institute of Electrical and Electronics Engineers; Volume: 50; Issue: 6 Linguagem: Inglês
10.1109/tns.2003.820792
ISSN1558-1578
AutoresXinwen Hu, Aditya P. Karmarkar, Bongim Jun, Daniel M. Fleetwood, Ronald D. Schrimpf, R.D. Geil, Robert A. Weller, B. D. White, M. Bataiev, L. J. Brillson, Umesh K. Mishra,
Tópico(s)Semiconductor materials and devices
ResumoThe degradation of AlGaN/AlN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluences up to 3/spl times/10/sup 15/ cm/sup -2/. The devices have much higher mobility than AlGaN/GaN devices, but they possess similarly high radiation tolerance, exhibiting little degradation at fluences up to 1/spl times/10/sup 14/ cm/sup -2/. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal are the primary damage mechanisms. The device degradation is observed as a decrease in the maximum transconductance, an increase in the threshold voltage, and a decrease in the drain saturation current.
Referência(s)