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Electrical and optical properties of ZnO thin film as a function of deposition parameters

2001; Elsevier BV; Volume: 65; Issue: 1-4 Linguagem: Inglês

10.1016/s0927-0248(00)00075-1

1879-3398

Woon‐Jo Jeong, Gye‐Choon Park,

Copper-based nanomaterials and applications

Al-doped zinc oxide (AZO) and undoped zinc oxide (ZO) films have been prepared by rf magnetron sputtering. Films with low resistivities were achieved by using an Al-doped ZnO target and films with higher resistivities can be obtained by introducing oxygen during deposition. An AZO thin film which was fabricated with an rf power of 180 W, a sputtering pressure of 10 mTorr and thickness of 5000 Å showed the lowest resistivity of 1.4×10−4 Ω cm and transmittance of 95% in the visible range, and ZO film made by reactive sputtering with the above 10% oxygen content had the highest resistivity of 6×1014 Ω cm.