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Energy dependence of proton damage in AlGaAs light-emitting diodes

2000; Institute of Electrical and Electronics Engineers; Volume: 47; Issue: 6 Linguagem: Inglês

10.1109/23.903798

1558-1578

Robert A. Reed, Paul W. Marshall, Cheryl J. Marshall, Ray Ladbury, H.S. Kim, Loc Xuan Nguyen, J.L. Barth, K.A. LaBel,

CCD and CMOS Imaging Sensors

We measure the energy dependence of proton-induced LED degradation using large numbers of devices and incremental exposures to gain high confidence in the proton energy dependence and device-to-device variability of damage. We compare single versus double heterojunction AlGaAs technologies (emitting at 880 nm and 830 nm, respectively) to previous experimental and theoretical results. We also present a critical review of the use of nonionizing energy loss in AlGaAs for predictions of on-orbit degradation and assess the uncertainties inherent in this approach.