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Ga-doped ZnO nanorod arrays grown by thermal evaporation and their electrical behavior

2008; IOP Publishing; Volume: 20; Issue: 1 Linguagem: Inglês

10.1088/0957-4484/20/1/015601

1361-6528

Cheol Hyoun Ahn, Won Suk Han, Bo Hyun Kong, Hyung Koun Cho,

Gas Sensing Nanomaterials and Sensors

Vertically well-aligned Ga-doped ZnO nanorods with different Ga content were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt% Ga with respect to the Zn content showed minimum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. A p-n diode structure with Ga-doped ZnO nanorods as an n-type layer displayed a distinct white light luminescence from the side view of the device, showing weak ultraviolet and various deep-level emissions.